APTGT400A120D3G
RoHS 
RoHS compliant
RoHS compliantPackage D-3 Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 580A 2100W D3
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Buying Options
Total Price: USD $963.81
Unit Price: USD $963.806455
≥1 USD $963.806455
≥200 USD $384.565478
≥500 USD $371.714813
≥1000 USD $365.365628
Inventory: 3884
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 36 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 11
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.1 V
Input Capacitance (Cies) @ Vce 29nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 830 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 400A
Turn On Time 400 ns
Input Capacitance 29nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 750μA
Max Collector Current 580A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 2100W
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X7
Pin Count 11
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 2.1kW
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Operating Temperature -40°C~150°C TJ
Alternative Model
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