APTGT30DDA60T3G
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 600V 50A 32-Pin Case SP-3
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 90W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Number of Elements 2
Configuration Dual Boost Chopper
Element Configuration Dual
Case Connection ISOLATED
Power - Max 90W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 50A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 1.6nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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