Input Capacitance (Cies) @ Vce 18.5nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 600 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 300A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 500μA
Max Collector Current 400A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 940W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ