Input Capacitance (Cies) @ Vce 1.1nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 32A
Collector Emitter Voltage (VCEO) 1.9V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Configuration Full Bridge Inverter
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Max Power Dissipation 62W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ