Operating Temperature -40°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 750W
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 290A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 12.3nF @ 25V