Input Capacitance (Cies) @ Vce 9.2nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 150A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration Three Level Inverter
Terminal Form UNSPECIFIED
Max Power Dissipation 480W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ