APTGT150DU170G
RoHS
/
Package SP6
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.7KV 250A 7-Pin Case SP-6
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.4 V
Input Capacitance (Cies) @ Vce 13.5nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 1100 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 150A
Turn On Time 450 ns
Input Capacitance 13.5nF
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Current - Collector Cutoff (Max) 350μA
Max Collector Current 250A
Collector Emitter Voltage (VCEO) 1.7kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 890W
Case Connection ISOLATED
Element Configuration Dual
Configuration Dual, Common Source
Number of Elements 2
JESD-30 Code R-XUFM-X7
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 890W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2006
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 6
Package / Case SP6
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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