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APTGT150A60T3AG

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 600V 225A 20-Pin Case SP-3
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Buying Options
Total Price: USD $252.84
Unit Price: USD $252.838282
≥1 USD $252.838282
≥200 USD $100.884549
≥500 USD $97.513022
≥1000 USD $95.846952
Inventory: 5116
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 36 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 20
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X10
Qualification Status Not Qualified
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 225A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 9.2nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 150A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 9.2nF @ 25V
VCEsat-Max 1.9 V

Compliance

RoHS Status RoHS Compliant

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