APTGT150A120T3AG
RoHS 
RoHS compliant
RoHS compliantPackage SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 220A 833W SP3
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Buying Options
Total Price: USD $264.45
Unit Price: USD $264.450883
≥1 USD $264.450883
≥200 USD $105.517773
≥500 USD $101.991324
≥1000 USD $100.249105
Inventory: 6665
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 36 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 20
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 833W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X10
Qualification Status Not Qualified
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 833W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 220A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 10.7nF
Turn On Time 335 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 10.7nF @ 25V
VCEsat-Max 2.1 V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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