Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.1nF @ 25V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration Triple, Dual - Common Source
Terminal Form UNSPECIFIED
Max Power Dissipation 340W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ