Input Capacitance (Cies) @ Vce 6.1nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 1.9V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Max Power Dissipation 340W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ