APTGT100DA120TG
RoHS
/
Package SP4
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
SP4 Chassis Mount Trench Field Stop Single IGBT Module 7.2nF @ 25V 250muA 480W 610ns
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 7.2nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn On Time 340 ns
Input Capacitance 7.2nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250??A
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 480W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X12
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 480W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2006
Operating Temperature -40?°C~150?°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case SP4
Mounting Type Chassis Mount
Mount Chassis Mount
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