Input Capacitance (Cies) @ Vce 7.2nF @ 25V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Half Bridge
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Max Power Dissipation 480W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ