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APTGT100A120D1G

Microsemi Corporation
RoHS
/
Package D1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE TRENCH PHASE LEG D1
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Inventory: 9477
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

VCEsat-Max 6.5 V
Input Capacitance (Cies) @ Vce 7nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 830 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn On Time 400 ns
Input Capacitance 7nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 3mA
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 520W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2010

Physical

Number of Pins 7
Package / Case D1
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Alternative Model

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