Input Capacitance (Cies) @ Vce 6.15nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 50μA
Max Collector Current 185A
Collector Emitter Voltage (VCEO) 2.4V
Turn-Off Delay Time 290 ns
Configuration Half Bridge
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 650W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ