Operating Temperature -40°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 385W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Dual Boost Chopper
Element Configuration Dual
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 110A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 75A
IGBT Type Trench Field Stop
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.4nF @ 25V