APTGL60TL120T3G
RoHS 
RoHS compliant
RoHS compliantPackage SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
POWER MODULE IGBT 1200V 60A SP3
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Buying Options
Total Price: USD $254.12
Unit Price: USD $254.122298
≥1 USD $254.122298
≥200 USD $101.39658
≥500 USD $98.007985
≥1000 USD $96.334038
Inventory: 3214
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 36 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X16
Number of Elements 4
Configuration Three Level Inverter
Case Connection ISOLATED
Power - Max 280W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.77nF
Turn On Time 80 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.77nF @ 25V
VCEsat-Max 2.2 V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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