Operating Temperature -40°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.082kW
Terminal Form UNSPECIFIED
Turn On Delay Time 160 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 340 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 610A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Turn Off Time-Nom (toff) 620 ns
IGBT Type Trench Field Stop
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 24.6nF @ 25V