APTGL475A120D3G
RoHS 
RoHS compliant
RoHS compliantPackage D-3 Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 610A 2080W D3
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Buying Options
Total Price: USD $1080.42
Unit Price: USD $1080.423484
≥1 USD $1080.423484
≥200 USD $431.095967
≥500 USD $416.690828
≥1000 USD $409.572284
Inventory: 8909
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.2 V
Input Capacitance (Cies) @ Vce 24.6nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 580 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Turn On Time 270 ns
Input Capacitance 24.6nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 610A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 400 ns
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 2080W
Turn On Delay Time 200 ns
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Pin Count 11
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 2.08kW
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 7
Package / Case D-3 Module
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 36 Weeks
Alternative Model
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