Input Capacitance (Cies) @ Vce 1.95nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 65A
Collector Emitter Voltage (VCEO) 2.25V
Configuration Three Phase Inverter
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 220W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ