Input Capacitance (Cies) @ Vce 18.6nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 530 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 300A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 420A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Dual
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 1.5kW
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ