Operating Temperature -40°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 940W
Terminal Form UNSPECIFIED
Configuration Half Bridge
Element Configuration Dual
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 230A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 150A
Turn Off Time-Nom (toff) 430 ns
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 9.3nF @ 25V