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APTGL180A1202G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 220A 750W SP2
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

VCEsat-Max 2.2 V
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 150A
Input Capacitance 9.3nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 300μA
Max Collector Current 220A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Power - Max 750W
Element Configuration Dual
Configuration Half Bridge
Number of Elements 1
Max Power Dissipation 750W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Operating Temperature -40°C~175°C TJ

Physical

Number of Pins 18
Package / Case SP2
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 3 weeks ago)
Factory Lead Time 22 Weeks

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