Input Capacitance (Cies) @ Vce 9.3nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 150A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 300μA
Max Collector Current 220A
Collector Emitter Voltage (VCEO) 1.2kV
Element Configuration Dual
Configuration Half Bridge
Max Power Dissipation 750W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ