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APTGF90DA60T1G

Microsemi Corporation
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 600V 110A 12-Pin Case SP-1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 4.3nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 90A
Turn On Time 51 ns
Input Capacitance 4.3nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 110A
Collector Emitter Voltage (VCEO) 2.5V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 416W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position UPPER
Max Power Dissipation 416W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007

Physical

Transistor Element Material SILICON
Number of Pins 1
Package / Case SP1
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

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