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APTGF90DA60D1G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package D1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 600V 130A 445W D1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 4.3nF @ 25V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 180 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 100A
Turn On Time 37 ns
Input Capacitance 4.3nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 500μA
Max Collector Current 130A
Collector Emitter Voltage (VCEO) 2.45V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 445W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Operating Temperature (Max) 150°C
JESD-30 Code R-XUFM-X7
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 445W
Terminal Finish TIN SILVER COPPER
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Pbfree Code yes
JESD-609 Code e1
Published 2012

Physical

Transistor Element Material SILICON
Package / Case D1
Mounting Type Chassis Mount
Mount Chassis Mount

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