APTGF75SK60D1G
RoHS 
RoHS compliant
RoHS compliantPackage D1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
D1 Chassis Mount NPT Single IGBT Module 3.3nF @ 25V 500muA 355W 205ns
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D1
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 355W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 355W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.45V
Max Collector Current 100A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.3nF
Turn On Time 90 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 75A
Turn Off Time-Nom (toff) 205 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Compliance
RoHS Status RoHS Compliant
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