APTGF75DA60D1G
RoHS 
RoHS compliant
RoHS compliantPackage D1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 100A 355W D1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 205 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 75A
Turn On Time 90 ns
Input Capacitance 3.3nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 500μA
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 2.45V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 355W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
JESD-30 Code R-XUFM-X7
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 355W
Terminal Finish TIN SILVER COPPER
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Pbfree Code yes
JESD-609 Code e1
Published 2003
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case D1
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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