APTGF50VDA60T3G
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
POWER MOD IGBT NPT DL BOOST SP3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.45 V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 151 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Turn On Time 52 ns
Input Capacitance 2.2nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 65A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Element Configuration Dual
Configuration Dual Boost Chopper
Number of Elements 2
Qualification Status Not Qualified
Pin Count 25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 20
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2012
Physical
Number of Pins 20
Package / Case SP3
Mounting Type Chassis Mount
Mount Chassis Mount, Through Hole
Alternative Model
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