Input Capacitance (Cies) @ Vce 3.45nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Collector Emitter Saturation Voltage 3.2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Dual Boost Chopper
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Max Power Dissipation 312W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Number of Terminations 20
Moisture Sensitivity Level (MSL) 1 (Unlimited)