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APTGF50TDU120PG

Microsemi Corporation
RoHS
/
Package SP6
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1.2KV 75A 21-Pin Case SP-6P
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 3.45nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Turn On Time 100 ns
Input Capacitance 3.45nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 3.7V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 312W
Case Connection ISOLATED
Configuration Triple, Dual - Common Source
Number of Elements 6
Operating Temperature (Max) 150°C
JESD-30 Code R-XUFM-X21
Pin Count 21
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 312W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2012

Physical

Transistor Element Material SILICON
Number of Pins 6
Package / Case SP6
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

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