APTGF50DA120T1G
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 75A 12-Pin Case SP-1
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Technical Details
Technical
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.45nF @ 25V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Turn On Time 100 ns
Input Capacitance 3.45nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 3.7V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 312W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 312W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2012
Compliance
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Number of Pins 1
Package / Case SP1
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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