APTGF50A60T1G
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 600V 65A 12-Pin Case SP-1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.45 V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 151 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Turn On Time 52 ns
Input Capacitance 2.2nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 65A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 250W
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Qualification Status Not Qualified
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2007
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 1
Package / Case SP1
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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