Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 17nF @ 25V
Turn Off Time-Nom (toff) 430 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 360A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 500μA
Max Collector Current 450A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 1.56kW
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)