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APTGF30A60T1G

Microsemi Corporation
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 600V 42A 12-Pin Case SP-1
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Technical Details

Technical

Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.35nF @ 25V
NTC Thermistor Yes
IGBT Type NPT
Turn Off Time-Nom (toff) 111 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Turn On Time 44 ns
Input Capacitance 1.35nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 42A
Collector Emitter Voltage (VCEO) 2.45V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 140W
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Qualification Status Not Qualified
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 140W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2012

Physical

Transistor Element Material SILICON
Number of Pins 1
Package / Case SP1
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Compliance

RoHS Status RoHS Compliant

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