Input Capacitance (Cies) @ Vce 1.65nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 386 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 3.7V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Dual
Configuration Half Bridge
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Max Power Dissipation 208W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)