APTGF200U120DG
RoHS
/
Package SP6
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 275A 1136W SP6
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 3.7 V
Input Capacitance (Cies) @ Vce 13.8nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn On Time 100 ns
Input Capacitance 13.8nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 500μA
Max Collector Current 275A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application GENERAL PURPOSE SWITCHING
Power - Max 1136W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Pin Count 5
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 1.136kW
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 1999
Physical
Number of Pins 5
Package / Case SP6
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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