APTGF200A120D3G
RoHS
/
Package D-3 Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 300A 11-Pin Case D-3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 3.7 V
Input Capacitance (Cies) @ Vce 13nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 590 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn On Time 180 ns
Input Capacitance 13nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 300A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 1400W
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Pin Count 11
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 1.4kW
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2012
Physical
Number of Pins 11
Package / Case D-3 Module
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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