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APTGF180DH60G

Microsemi Corporation
RoHS
/
Package SP6
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description POWER MODULE IGBT 600V 180A SP6
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

VCEsat-Max 2.5 V
Input Capacitance (Cies) @ Vce 8.6nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 180A
Turn On Time 51 ns
Input Capacitance 8.6nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 300μA
Max Collector Current 220A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Element Configuration Dual
Configuration Asymmetrical Bridge
Number of Elements 2
Pin Count 8
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 833W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2006

Physical

Number of Pins 8
Package / Case SP6
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

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