Input Capacitance (Cies) @ Vce 8.6nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 180A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 300μA
Max Collector Current 220A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Asymmetrical Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 833W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)