APTGF100A1202G
RoHS
/
Package SP2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
POWER MOD IGBT NPT PHASE LEG SP2
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Inventory: 4800
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 3.7 V
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 100A
Input Capacitance 6.5nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 135A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Element Configuration Dual
Configuration Half Bridge
Number of Elements 1
Max Power Dissipation 568W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2012
Physical
Number of Pins 18
Package / Case SP2
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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