APTCV90TL12T3G
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
POWER MODULE IGBT QUAD 900V SP3
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Inventory: 3107
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Input Capacitance (Cies) @ Vce 2.77nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 370 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Turn On Time 80 ns
Input Capacitance 2.77nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 2.2V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 280W
Case Connection ISOLATED
Configuration Three Level Inverter - IGBT, FET
Number of Elements 4
Pin Count 32
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 280W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 32
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2012
Operating Temperature -40°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case SP3
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
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