APTCV60TLM99T3G
RoHS 
RoHS compliant
RoHS compliantPackage SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
POWER MODULE IGBT QUAD 600V SP3
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Buying Options
Total Price: USD $217.78
Unit Price: USD $217.779913
≥1 USD $217.779913
≥200 USD $86.895599
≥500 USD $83.992778
≥1000 USD $82.557778
Inventory: 8966
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 32
Additional Feature AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 90W
Terminal Position DUAL
Terminal Form UNSPECIFIED
Pin Count 32
Number of Elements 2
Configuration Three Level Inverter - IGBT, FET
Case Connection ISOLATED
Power - Max 90W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 50A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 1.6nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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