Operating Temperature -40°C~175°C TJ
Number of Terminations 32
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Form UNSPECIFIED
Configuration Three Level Inverter - IGBT, FET
Element Configuration Dual
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.62nF @ 25V