APTCV50H60T3G
RoHS 
RoHS compliant
RoHS compliantPackage SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 80A 176W SP3
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Buying Options
Total Price: USD $260.6
Unit Price: USD $260.600147
≥1 USD $260.600147
≥200 USD $103.98168
≥500 USD $100.506434
≥1000 USD $98.790473
Inventory: 5898
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Published 1997
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT, Trench Field Stop
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn On Time 170 ns
Input Capacitance 3.15nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 1.9V
Input Standard
Polarity/Channel Type N-CHANNEL
Power - Max 176W
Case Connection ISOLATED
Configuration Full Bridge
Number of Elements 4
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X25
Pin Count 25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 176W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 25
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Compliance
RoHS Status RoHS Compliant
Alternative Model
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