APT75GN120J
RoHS
/
Package ISOTOP
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 124A 379W ISOTOP
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 4.8nF @ 25V
Gate-Emitter Voltage-Max 30V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 925 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn On Time 101 ns
Input Capacitance 4.8nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 100μA
Max Collector Current 124A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 379W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Pin Count 4
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 379W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2005
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case ISOTOP
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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