Gate-Emitter Thr Voltage-Max 6V
Input Capacitance (Cies) @ Vce 7.4nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 219 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 130A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 431W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ