Input Capacitance (Cies) @ Vce 3.59nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 495 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 80μA
Max Collector Current 93A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 378W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)