Input Capacitance (Cies) @ Vce 2.25nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 450 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 40μA
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 277W
Subcategory Insulated Gate BIP Transistors
Additional Feature AVALANCHE RATED
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)