APT45GP120J
RoHS 
RoHS compliant
RoHS compliantPackage ISOTOP
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 75A 329W ISOTOP
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Buying Options
Total Price: USD $105.27
Unit Price: USD $105.273574
≥1 USD $105.273574
≥200 USD $42.004923
≥500 USD $40.601433
≥1000 USD $39.908221
Inventory: 4890
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Published 1999
Series POWER MOS 7?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 329W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 75A
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 75A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.3V
Input Capacitance 3.94nF
Turn On Time 47 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A
Continuous Collector Current 75A
Turn Off Time-Nom (toff) 230 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.94nF @ 25V
Gate-Emitter Thr Voltage-Max 6V
Dimensions
Height 9.6mm
Length 38.2mm
Width 25.4mm
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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