Gate-Emitter Thr Voltage-Max 6V
Input Capacitance (Cies) @ Vce 3.24nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 222 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 64A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 284W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ