Input Capacitance (Cies) @ Vce 1.65nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 386 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 25A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 45A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Terminal Form UNSPECIFIED
Max Power Dissipation 227W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)